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first server in sight. Rather, a logical approach must be used to facilitate the logon process, first by upgrading the primary domain controllers (PDCs), backup domain controllers (BDCs), then member servers, and, ultimately, clients, if that is within the scope of your organization s implementation plan. Figure 18.1 shows a common coexistence scenario. Besides Windows NT upgrades, Novell NetWare servers also have an upgrade path with Windows 2000, much the way that was provided in NT, although importing from NDS is supported rather than just NetWare 3.x bindery technology. Many organizations are choosing this option to unify the technology in company data centers (see Figure 18.2). This chapter explores these processes and discusses the pitfalls to watch out for.

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, First result from a macromolecular crystallography system with a polycapillary collimating optic and a microfocus X-ray generator, 33, 882 (2000) 43 Huang, H, Hofmann, F A, MacDonald, C A, Gibson, W M, Carter, D C, Ho, J X, Ruble, J R and Ponomarev, I Proc SPIE, 4144, 100 109 (2000) 44 Hofmann, F A, Gibson, W M, Lee, S M and MacDonald, C A Polycapillary X-ray optics for thin lm strain and texture analysis In Thin Film Stresses and Mechanical Properties VII, R C Cammarata, M A Nastasi, E P Busso, W C Oliver, eds, Materials Research Society Proceedings, vol 505, pp 3 14, 1998 45 Turcu, I C E, Forber, R, Grygier, R, Rieger, H, Powers, M, Campeau, S, French, G, Foster, R, Mitchell, P, Gaeta, C, Cheng, Z.

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QUANTIFICATION MODELS IN EPMA could be analysed using GE-EPMA at negative exit-angles, if the particles are positioned at the edge of a tilted specimen substrate By increasing the exit angle in small steps, the particle structure is then revealed layer by layer Another option for the analysis of structured particles is dualvoltage EPMA (DV-EPMA) in which particles are analysed at two or more different voltages (eg 5 and 15 kV), using the change in information depth to study particle layers (Ro et al, 2001a) This technique will be further discussed below in Section 754 Regarding sample treatment during analysis, developments have been reported on the use of low-vacuum, environmental or variable pressure SEM (VP-SEM).

The difference with SEM can be found in the specimen chamber, which is not under vacuum conditions, but contains a gas mixture in order to perform electron microscopy at higher pressure (Danilatos, 1994) The technology behind VP-SEM depends on a combination of differential pumping and an electron beam transfer system, allowing an electron beam to be formed in vacuum and being transferred to the specimen in the gas medium The advantage of this technique lies in its possibility to study wet, volatile and even non-conducting samples, since the gas medium preserves the samples from evaporation, and it acts as a charge dissipating means which frees the sample from conductive coatings or chemical treatments Since these advantages would be able to broaden the range of applications for X-ray analysis in electron microscopy, this technique appears to be very promising.

FTIR spectra, of CBD ZnS(O,OH), 205. See also Fourier transform infrared (FTIR) Functional devices, assembling, xv Functional inks, 387 389. See also Ink entries for ink jet printing, 394 395 for lithographic printing, 393 GaAs wafers, etching of, 412. See also Gallium arsenide entries GaAs wires, 412 Gadolinium zirconium oxide (Gd2Zr2O7), electrodeposition of, 225 229 Gallium arsenide (GaAs), microstructured, 17. See also GaAs entries Gallium arsenide ribbons, in exible macroelectronics, 436 437, 438 439 Gallium arsenide transistors in heterogeneous three-dimensional integration, 432, 433, 435, 436 in integrated circuits, 429, 431, 432 in three-dimensional integration, 432 Gallium nitride (GaN) nanowires (NWs), 363 transistors, in heterogeneous three-dimensional integration, 433, 434 Gallium zinc oxide (GZO) lms, 225 229 Gas chromatography, 59 Gas physisorption, 290 292 Gas-sensor applications nanowire lms for, 336 SILAR-grown ZnO lms for, 250 Gate-bias-induced carrier trapping, 121 122 Gate dielectric materials, selecting, 109 113 Gate dielectrics, 18 19, 116 solution-processed, 145 performance of, 121 Gate leakage currents, 116 Gel permeation chromatogram (GPC), 133 134 Germanium sul de (GeS2) lm deposition, amorphous, 102

However, most of the applications reported concern visual analysis in morphology studies (using special imaging detectors adapted to the gas medium), since Xray analysis is still rather dif cult One reason is electron skirting , a process in which electrons transfer energy to the gas medium The energy loss, which is dif cult to predict or to quantify, affects all the electron interactions with the specimen The lack of suitable standards is also reported to be a drawback for X-ray analysis in VP-SEM (Grif n et al, 2000), and, therefore, one can only nd examples of particle imaging in the literature However, VP-SEMs now account for 50 % of.

Source angle (degrees)

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